Hydrogen Gas Sensing Characteristics of Nanostructured NiO Thin Films Synthesized by SILAR Method

Karaduman I., Corlu T., YILDIRIM M. A., ATEŞ A., ACAR S.

JOURNAL OF ELECTRONIC MATERIALS, cilt.46, sa.7, ss.4017-4023, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 46 Sayı: 7
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1007/s11664-017-5400-5
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.4017-4023
  • Anahtar Kelimeler: Gas sensors, NiO, hydrogen, SILAR, SENSOR, H-2
  • Gazi Üniversitesi Adresli: Evet

Özet

Nanostructured NiO thin films have been synthesized by a facile, low-cost successive ionic layer adsorption and reaction (SILAR) method, and the effects of the film thickness on their hydrogen gas sensing properties investigated. The samples were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD) analysis, and energy-dispersive x-ray analysis. The XRD results revealed that the crystallinity improved with increasing thickness, exhibiting polycrystalline structure. SEM studies showed that all the films covered the glass substrate well. According to optical absorption measurements, the optical bandgap decreased with increasing film thickness. The gas sensing properties of the nanostructured NiO thin films were studied as a function of operating temperature and gas concentration. The samples showed good sensing performance of H-2 gas with high response. The maximum response was 75% at operating temperature of 200A degrees C for hydrogen gas concentration of 40 ppm. These results demonstrate that nanostructured NiO thin films synthesized by the SILAR method have potential for application in hydrogen detection.