Akademik Veri Yönetim Sistemi
Talks on Photonics Science and Technologies@IZTECH (IZPHOTECH), İzmir, Türkiye, 21 - 22 Ekim 2025, ss.27, (Özet Bildiri)
Aluminum oxide (Al₂O₃) thin films with thicknesses of 100 and 300 nm were deposited from high-purity sapphire single
crystals onto corning glass and silicon substrates using the electron-beam (e-beam) evaporation system under high-vacuum
conditions. A rigorous systematic investigation was conducted to ascertain the impact of the film thickness on structural and
optical properties.
The structural characteristics of the two deposited films were examined using X-Ray Diffraction (XRD), revealing an
amorphous structure which is consistent with the results obtained through Fourier-Transform Infrared (FTIR) fingerprinting.
Scanning Electron Microscopy (SEM) analyses of the surface and the profile were utilized to investigate surface morphology
and film thickness. A cross-comparison was conducted of film thickness measurements obtained through distinct methods:
Scanning Electron Microscopy (SEM), profilometer, and in-situ Quartz Crystal Microbalance (QCM) measurements.
The spectroscopic analysis was conducted using UV–Vis–NIR spectrophotometry, with the measurement range extending
from 200 to 1100 nanometers. The obtained transmittance spectra of the deposited two Al₂O₃ thin films demonstrated an
average optical transmittance of approximately 90% in the visible region. The optical band gaps were determined utilizing
Tauc plots, as around 5.5 eV.
The obtained results of the study demonstrate the optical transparency and structural stability of e-beam-evaporated Al2O3
thin films, thereby affirming their suitability for utilization as dielectric spacer layers, optical coatings or passivation layers in
optoelectronic and photonic devices.