The structural, optical and morphological properties of Ga-rich GaxIn1-xP layers with various gallium compositions grown on epi-ready semi-insulating (100)-oriented GaAs substrates by using Molecular Beam Epitaxy technique are presented in this study. The GaxIn1-xP/GaAs structures (S1, S2 and S3) have been evaluated by means of high resolution X-ray diffraction, photoluminescence (PL) and atomic force microscopy measurements at room temperature. Experimental forward and reverse bias current-voltage (I-V) characteristics of structure S3 was investigated at room temperature due to its better characteristics when compared to the other two samples. The main electrical parameters such as ideality factor (n), barrier height (I broken vertical bar (b) ) and series resistance (R (s) ) were extracted from forward bias I-V characteristics and Cheung's function. In addition, Hall measurements were carried out as a function of temperature (30-300 K) and at a magnetic field of 0.4 T were presented for structure S3.