Illumination Effect on Admittance Measurements of Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes in Wide Frequency and Applied Bias Voltage Range


Yeriskin S. A. , Uslu H., Tunc T., ALTINDAL Ş.

1st International Congress on Advances in Applied Physics and Materials Science (APMAS), Antalya, Turkey, 12 - 15 May 2011, vol.1400, pp.541-545 identifier identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 1400
  • Doi Number: 10.1063/1.3663178
  • City: Antalya
  • Country: Turkey
  • Page Numbers: pp.541-545
  • Keywords: Illumination effect, PVA, Frequency and voltage dependent, Electrical characteristics, Series resistance

Abstract

In order to have a good interpretation of the illumination effect on the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) profiles, C-V and G/omega-V characteristics of the polyvinyl alcohol (Co, Zn-Doped)/n-Si Schottky barrier diodes (SBDs) were investigated in the wide frequency and applied bias voltage ranges at room temperature. Experimental results show that the values of both C and G/omega are strong functions of frequency and applied bias voltage in dark and under illumination (200 W) conditions. It is clear that the dispersion in C and G/omega is considerably high in the depletion and accumulation regions due to illumination induced electron-hole pairs and series resistance (R-s) effect, respectively. The values of C and G/omega exponentially decrease with the increasing frequency and at high frequencies (f >= 100 kHz) the values of C and G/omega become almost independent of frequency both in dark under illumination.