Illumination Effect on Admittance Measurements of Polyvinyl Alcohol (Co, Zn-Doped)/n-Si Schottky Barrier Diodes in Wide Frequency and Applied Bias Voltage Range

Yeriskin S. A., Uslu H., Tunc T., ALTINDAL Ş.

1st International Congress on Advances in Applied Physics and Materials Science (APMAS), Antalya, Türkiye, 12 - 15 Mayıs 2011, cilt.1400, ss.541-545 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1400
  • Doi Numarası: 10.1063/1.3663178
  • Basıldığı Şehir: Antalya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.541-545
  • Anahtar Kelimeler: Illumination effect, PVA, Frequency and voltage dependent, Electrical characteristics, Series resistance
  • Gazi Üniversitesi Adresli: Evet

Özet

In order to have a good interpretation of the illumination effect on the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) profiles, C-V and G/omega-V characteristics of the polyvinyl alcohol (Co, Zn-Doped)/n-Si Schottky barrier diodes (SBDs) were investigated in the wide frequency and applied bias voltage ranges at room temperature. Experimental results show that the values of both C and G/omega are strong functions of frequency and applied bias voltage in dark and under illumination (200 W) conditions. It is clear that the dispersion in C and G/omega is considerably high in the depletion and accumulation regions due to illumination induced electron-hole pairs and series resistance (R-s) effect, respectively. The values of C and G/omega exponentially decrease with the increasing frequency and at high frequencies (f >= 100 kHz) the values of C and G/omega become almost independent of frequency both in dark under illumination.