Research Information System
ACS Applied Electronic Materials, vol.7, no.20, pp.9399-9407, 2025 (SCI-Expanded)
In this research, the main electrical properties and influence of surface states (Nss) on the performance of Au/n-Si (MS) Schottky diodes (SDs) with and without pure and 3% and 5% Ni-doped PVP through capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements within the voltage range of −3.5 V/3.5 V have been investigated. The basic electrical parameters extracted from the C–2–V plots and Hill–Coleman analysis, providing insight into the doping concentration (Nd), depletion layer width (Wd), barrier height (ΦB), built-in potential (Vbi), and maximum electric field (Emax) for each configuration, are included in this article. For all prepared samples, the C–V curves exhibit a clear peak at around 0.8 V, followed by a sharp decline into negative values beyond 2 V, while the G/ω–V characteristics show a rapid increase within this voltage range. To explain this behavior, both C and G/ω were simultaneously plotted as functions of voltage and current. Furthermore, the Nssand the series-resistance (Rs) were analyzed to understand their influences on the device’s electrical parameters, especially focusing on the negative capacitance (NC), anomalous-peak behavior, and inductive-like response observed at the accumulation region. In addition, the corrections of Cmand Gm/ω were investigated to understand the effect of Rsand interfacial polarization on the electrical properties of pure and Ni-doped PVP samples, where the anomalous peak and NC were greatly enhanced.