Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped GaSb grown by the liquid encapsuled Czochralski technique are carried out as functions of temperature (35-350 K) and magnetic field (0-1.35 T). The power law model is used to explain the temperature-dependent resistivity. The magnetic-field-dependent data are analysed using the quantitative mobility spectrum analysis technique. The effect of individual band parameters (n L, nΓ, μL, μΓ, p and μp) on both the electron and magneto transports have been discussed. The EL-EΓ energy separation between the L and conduction band edges is also derived. ©2005 Chinese Physical Society and IOP Publishing Ltd.