We have investigated the structural and optical properties of bulk GaTe crystal grown by vertical Bridgman method. Two photon absorption (TPA) properties of GaTe crystal have been investigated by the open aperture Z-scan technique under 1064 nm wavelength with 4 ns or 65 ps pulse durations. The TPA coefficients are greater in ns regime than that of ps regime. Upon increasing intensity of incident light from 5.02 x 10(7) W/cm(2) to 1.07 x 10(8) W/cm(2), the TPA coefficients increased from 3.47 x 10(-6) cm/W to 8.53 x 10(-6) cm/W for nanosecond excitation. Similarly, when intensity of incident light was increased from 6.81 x 10(8) W/cm(2) to 9.94 x 10(8) W/cm(2) the TPA coefficients increased from 3.53 x 10(-7) cm/W to 6.83 x 10(-7) cm/W for picosecond excitation. Measured TPA coefficient of GaTe crystal is larger than that of GaSe and GaS layered crystals. (c) 2012 Elsevier Ltd. All rights reserved.