The temperature dependent negative dielectric constant phenomena of Au/n-GaAs structure with CZO interfacial layer

Kinaci B.

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.32, sa.5, ss.5928-5935, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 32 Sayı: 5
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s10854-021-05313-x
  • Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.5928-5935
  • Gazi Üniversitesi Adresli: Hayır

Özet

In this study, the copper-doped (wt 3%) ZnO (CZO) thin film was deposited on n-type (100)-oriented GaAs substrate with the RF sputtering system and this film was annealed at 600 degrees C. The dielectric parameters such as dielectric constant (epsilon '), dielectric loss (epsilon ''), dielectric loss tangent (tan delta), real (M ') and the imaginary (M '') part of the electric modulus, and ac conductivity (sigma(ac)) of Au/n-GaAs MOS structure with CZO thin film were examined in the temperature range of 200-380 K by 30 K steps. The variations of these parameters depending on the voltage were also discussed in the range of 1.5 V to 3.0 V by step 0.5 V. Dielectric constant has been studied in detail in three different temperature ranges as low (200 - 260 K), medium (290 K), and high (300 - 380 K). While the dielectric constant takes positive values for the low and medium temperature range in the forward bias voltage region, it takes negative values for the high temperature region. As a result of this study, negative dielectric constant behavior was observed for high temperature values.