This study demonstrates the power conversion efficiency enhancement on In0.19Ga0.81As/GaAs quantum well solar cells (QWSC). The solar cell structure was grown on n-type (100)-oriented GaAs substrate by using solid-source molecular beam epitaxy technique and divided into square pieces. In order to understand whether the eight quantum wells were grown or not, scanning electron microscopy (SEM), and secondary ion mass spectrometry characterizations were done at room temperature. After that, the Si3N4 antireflection layers were coated onto both two square pieces of In0.19Ga0.81As/GaAs QWSC structure and p-GaAs substrate at different temperatures by the radio frequency magnetron sputtering system. The optical properties of the Si3N4 coated and uncoated p-GaAs samples have been evaluated by means of ultraviolet-visible spectrometry measurements at room temperature. According to ultraviolet-visible spectrometry results, the best Si3N4 antireflection coated one was obtained at 100 degrees C substrate temperature. Thus, the In0.19Ga0.81As/GaAs QWSC structure with and without Si3N4 layer, which was coated at 100 degrees C substrate temperature, was selected for other measurements and processes. Moreover, the In0.19Ga0.81As/GaAs QWSC samples with and without Si3N4 antireflection coating were separately fabricated with different metallization materials for obtaining the solar cell electrical output parameters. AuGe and AuGeNi metallization materials were used for the fabrication processes. After fabrication, the electrical output parameters were extracted from the current-voltage measurements at room temperature both in dark and under AM1.5 - 1 Sun illumination. The proposed design which includes the AuGeNi metallization and Si3N4 antireflection layer enhanced the power conversion efficiency by 44.40%.