Analysis of Nb2O5 Films Coated on PI Substrates by Sol-gel Technique Which can be ETL Layer in Solar Cells


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Alpay R., Kara S. G., Serbest B., Ataşer T., Kinaci B., Akin Sönmez N., ...Daha Fazla

4 th International Conference on Light and Light-based Technologies (ICLLT), Ankara, Türkiye, 16 - 18 Mayıs 2024, cilt.1, sa.32, ss.116, (Özet Bildiri)

  • Yayın Türü: Bildiri / Özet Bildiri
  • Cilt numarası: 1
  • Basıldığı Şehir: Ankara
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.116
  • Gazi Üniversitesi Adresli: Evet

Özet

: The electron transport layer (ETL) functions to collect electrons and prevent the transport of holes to the electrode in the PSC. Nb2O5 has been reported to be a good electron transport layer for improving the efficiency of leaded perovskite solar cells [1]. Niobium pentoxide (Nb2O5) has been demonstrated as an ideal electron transport layer (ETL) material for solar cells due to its excellent optical transmittance and high carrier mobility. Transparent conductive electrodes (anodes) are also an important component for solar cells. AgNW has recently attracted great interest as a transparent conductive electrode due to their excellent optical transparency (>80%), low sheet resistivity (< 50 ohms/sq) and vacuum-free fabrication options. In this study, Nb2O5 solution was spin-coated on uncoated PI (Polyimides) and AgNWcoated PI. Firstly, within the scope of optimization studies, optical transmittance measurements of uncoated PI samples coated with Nb2O5 solution at (2500-3000- 3500-4000-4500-5000 rpm) were taken. XRD spectra showed that Nb2O5 films were amorphous as expected. As the next study, Nb2O5 solution was coated on AgNT/PI in spin coating by sol-gel technique. Electrical, optical and structural analysis of Nb2O5/AgNW/PI samples coated at different rpm were performed. The resistivity and carrier density for the Nb2O5/AgNW/PI sample are 5.6x10-3 ohm cm and 1.6x10+21 cm3 , respectively. Moreover, an average optical transmittance of 80% in the visible region and an optical band gap > 3.4 eV were achieved. This result shows that our Nb2O5 film obtained at low temperature can be used as ETL layer in solar cells.