The quantum-well (QW) lasers are the most important optoelectronic devices in many application fields and the current-transport mechanisms (CTMs) are strongly depend on temperature and voltage. Therefore, we have examined the samples in the temperature range of 80-360K. The electrical parameters such as saturation current (I-o), zero-bias barrier height (Phi(Bo)), ideality factor (n) and series resistance (R-s), were obtained from the forward bias 1-V data. The n and Phi(Bo) values change from 3.49 and 1.313 eV (at 80K) to 1.73 and 0.492 eV (at 360 K), respectively. These values of n indicate that the thermionic field emission (TFE) mechanism is dominated the others, particularly at low temperature (80-170K). High values of n were attributed to image force lowering of the barrier height, tunneling current at low temperature, generation-recombination current within the space charge region and the existence of interface states at metal/semiconductor interface. The Phi(Bo) values do not have to be absolutely correct, especially when there are more CTMs present in a given temperature interval. Also, n and R-s were found to be extremely dependent on the contributions of particular CTMs to the total current; the ratio of which to the TE theory increases with the increasing temperature. The Phi(Bo) and activation energy (E-a) values decrease with the linearly increasing temperature and voltage. In addition, double-logarithmic plots of the forward bias I-V characteristics have shown two distinct linear regions in the whole temperature range. SCLC mechanism may be dominated CTMs especially at high temperature regime namely regime II. (C) 2010 Elsevier B.V. All rights reserved.