Compositional effects on the inter band transition in GaAs1-xPx ternary alloys


ÇETİN S. , Mammadov T. , ÖZÇELİK S.

Optoelectronics and Advanced Materials, Rapid Communications, vol.3, no.9, pp.910-916, 2009 (Journal Indexed in SCI Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 3 Issue: 9
  • Publication Date: 2009
  • Title of Journal : Optoelectronics and Advanced Materials, Rapid Communications
  • Page Numbers: pp.910-916

Abstract

GaAs1-xPx/GaAs alloys were grown on SI-GaAs (100) substrate by solid source molecular beam epitaxy (MBE) technique using GaP decomposition source. The critical point (CP) energies of the inter band-transition edges of the structures were determined by line-shape analyses on their dielectric functions measured by spectroscopic ellipsometry (SE) at room temperature in the 0.5-5 eV photon energy regions. We obtained a new bowing parameter by analyzing effect of the phosphorous compositions on the E0 transition energy. The band gap energies of the alloys and their bowing value were also obtained by evaluating photoluminescence (PL) emission peak positions at the room temperature.