Effects of annealing on the structural properties of GaAs-based quantum well solar cells

Asar T., Sarikavak B., Ozturk M. K., Mammadov T., Ozcelik S.

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, vol.11, no.11, pp.1627-1631, 2009 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 11 Issue: 11
  • Publication Date: 2009
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1627-1631
  • Keywords: Molecular beam epitaxy (MBE), Annealing, Defect anaysis, GaInP, InGaAs, X-RAY-DIFFRACTION, SUPERLATTICES, LAYERS
  • Gazi University Affiliated: Yes


Ga1-xInxP and InxGa1-xAs quantum well solar cells (QWSC) grown on (100) and (110) orientated GaAs substrates were prepared by Molecular Beam Epitaxy (MBE). The annealing effects on the structural properties of the QWSC were investigated by high resolution X-ray diffractometer (HRXRD). Primarily, in-plane and out of-plane lattice parameters were found with the analysis of XRD data. Parallel X-ray strain (epsilon(II)), perpendicular X-ray strain (epsilon(perpendicular to)), misfit (epsilon(f)), alloy composition (x), tilt values and dislocations of the samples were carried out. Using the determined strain parameters, a dynamical theory based calculations for these structural properties have done by using increasing temperatures bringing out relaxation mechanism; interdiffusion and favored migration.