The electrical properties PbO based MOS (metal-oxide semiconductor)-type different Schottky barrier diodes on an Al/PbO/p-Si structure have been investigated and done a comparisonin this study. Al/PbO/p-Si structures were fabricated and their current-voltage (I-V) characteristics were measured at room temperature and in the dark. We tried to obtain information about the structure by comparing the electrical properties of the seven diodes on the Al/PbO/p-Si structure. The electrical characteristic parameters such as saturation current, ideality factor, barrier height and series resistance of the seven Al/PbO/p-Si Schottky barrier diodes were investigated from the forward bias I-V characteristics by using thermionic emission theory. The experimental values of ideality factors for seven diodes have changed from 1.09 to 2.95. The series resistances seven diodes have changed from 1.18 k to 3.20 k Omega by using dV/dln(I)-I characteristics. The barrier heights for seven diodes have changed from 0.64 eV to 0.74eV. The series resistances for seven diodes have changed from 1.41 k Omega to 3.38 k Omega.