Mole fraction dependence of mobility in InxGa1-xN alloys

Yildiz A., LİŞESİVDİN S. B., ACAR S., Kasap M.

6th International Conference of the Balkan-Physical-Union, İstanbul, Türkiye, 22 - 26 Ağustos 2006, cilt.899, ss.670 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 899
  • Doi Numarası: 10.1063/1.2733411
  • Basıldığı Şehir: İstanbul
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.670
  • Gazi Üniversitesi Adresli: Evet

Özet

Hall effect measurements was carried out at room temperature in three InxGa1-xN alloys. We have performed mobility curves as a function of In content. The effect of alloy scattering to mobility has been investigated in these samples.