Akademik Veri Yönetim Sistemi
Journal of Materials Science: Materials in Electronics, cilt.34, sa.9, 2023 (SCI-Expanded)
Due to their high dielectric strength, high resistivity, and extended range of band gap, diamond-like carbon films have great potential in the semiconductor device applications. In this study, Cu-doped diamond-like carbon (DLC) film deposited on Si substrate by electrodeposition technique to obtain Au/Cu-DLC/p-Si Schottky diodes (SDs). X-ray photoelectron spectroscopy was used to investigate the chemical compositions of the film. The (capacitance/conductance)–voltage–frequency (C–V–f, G–V–f) features of this structure were investigated between 1 kHz and 3 MHz. The basic electronic parameters of the SDs such as diffusion potential (VD), Fermi energy (EF) level, barrier height (ΦB), and depletion layer (WD) thickness were calculated from the reverse-bias C−2–V curves depending on frequency. The values of VD, ΦB, and series resistance were changed from 0.372 V, 0.665 eV, and 243.5 Ω at 10 kHz to 0.603 V, 0.896 eV, and 35.9 Ω at 3 MHz, respectively. The voltage and frequency-dependent spectra of interface states and their life time were also obtained by both the parallel conductance and high–low-frequency capacitance methods, respectively. The obtained results confirm the potential usage of DLC film in electronic device, and fabricated device shows excellent dielectric properties.