Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.31, sa.16, ss.13167-13172, 2020 (SCI-Expanded)
The current-voltage (I-V) and capacitance-voltage (C-V) behaviors of the (Au/Ni)/HfAlO3/n-Si (MIS) junctions at room temperature under white light with various intensities were investigated. The ln(I)-Vcurves show two linear behavior regions at about 1 V before and after the point of intersection that can be defined as two separate current-conduction (CMs) Mechanisms. The values of the ideality factor (n) and the zero-bias barrier height (phi(B0)) were extracted using the slope and intercept of the ln(I)-Vcurve before and after the intersection point based on lighting power. Although the phi(B0)values decrease with increasing light power,nincreases for two regions, and there is a strong linear relationship between them. The values of photo-current (I-ph) increase with the increasing lighting power due to the formation of electron-hole pairs. The slope of the double-logarithmicI(ph)-Pwas changed from 0.422 to 0.852, respectively, at - 2 V and - 9 V, which indicates the ongoing distribution ofN(ss). In addition, the profile of surface states (N-ss) ionized by light was obtained from the capacitance measured in dark and under lighting at 1 MHz. TheN(ss)-Vcurve has two characteristic peaks that correspond to the region of depletion and accumulation due to a special distribution ofN(ss)and their restructuring and reordering under the effects of lighting and an electric field.