Growth and characterization of AlGaAs/GaAs quantum well infrared photodetectors

Altuntas H., Ozcelik S.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.4, sa.2, ss.132-135, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 4 Sayı: 2
  • Basım Tarihi: 2010
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.132-135
  • Gazi Üniversitesi Adresli: Evet

Özet

Two AlGaAs/GaAs quantum well infrared photodetectors (QWIPs) were grown using molecular beam epitaxy (MBE) with continues growth method. One of them has bound-to-bound transition (B-T-B) QWIP and the other has bound-to-continuum transition (B-T-C) QWIP. The structural properties of the QWIPs were characterized by high-resolution x-ray diffraction (HRXRD) and optical properties were characterized by photoluminescence (PL) measurements. Also dark current measurements of the QWIPs were performed at low temperature and show that the B-T-C QWIP has lower dark current level than B-T-B QWIP due to reducing the carrier tunneling.