Growth and characterization of AlGaAs/GaAs quantum well infrared photodetectors


Altuntas H., Ozcelik S.

Optoelectronics and Advanced Materials, Rapid Communications, vol.4, no.2, pp.132-135, 2010 (Journal Indexed in SCI Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 4 Issue: 2
  • Publication Date: 2010
  • Title of Journal : Optoelectronics and Advanced Materials, Rapid Communications
  • Page Numbers: pp.132-135

Abstract

Two AlGaAs/GaAs quantum well infrared photodetectors (QWIPs) were grown using molecular beam epitaxy (MBE) with continues growth method. One of them has bound-to-bound transition (B-T-B) QWIP and the other has bound-to-continuum transition (B-T-C) QWIP. The structural properties of the QWIPs were characterized by high-resolution x-ray diffraction (HRXRD) and optical properties were characterized by photoluminescence (PL) measurements. Also dark current measurements of the QWIPs were performed at low temperature and show that the B-T-C QWIP has lower dark current level than B-T-B QWIP due to reducing the carrier tunneling.