On the complex dielectric, complex electric modulus, and conductivity of Au/(Brushite + Monetite: PVC)/n-Si (MPS) structures in the wide range of frequency and voltage
Journal of Materials Science: Materials in Electronics, cilt.37, sa.22, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 37 Sayı: 22
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s10854-026-18134-7
- Dergi Adı: Journal of Materials Science: Materials in Electronics
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, INSPEC, MEDLINE, Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Gazi Üniversitesi Adresli: Evet
Özet
This study investigates the complex interplay between dielectric properties and the Au/(B + M-doped PVC)/n-Si (B as Brushite, CaHPO4·2H2O and M as Monetite, CaHPO4) organic interlayer within metal–polymer–semiconductor (MPS) structures. The work aims to comprehensively analyze the (B + M:PVC)′s impact on MPS dielectric, electric modulus, and conductivity properties, contributing to a deeper understanding of nanoscale materials in electronic devices. Impedance measurements of Au/n-Si Schottky structures with (B + M-doped PVC) composite interlayer were conducted across a wide range of frequencies (2 kHz-2 MHz) and voltages (− 3 V/ + 4 V). The exploration uncovers frequency–voltage dependence on crucial parameters like loss tangent (tanδ), complex permittivity (ɛ*), AC electrical conductivity (σac), and complex electrical modulus (M*). Meanwhile, capacitance–conductance (C–G/ω) measurements were utilized to derive the graphs for ɛ′, ɛ″, M′, M″, Z′, Z″, σac, and tanδ in relation to frequency and voltage variations. The interface states and polarization are effective at low and medium frequencies in both the reversal and depletion regions. In contrast, at high frequencies, the series resistance is effective only in the accumulation region. The obtained high dielectric interlayer (ɛ′ = 14.25) even at 2 kHz indicates that this organic interlayer can be successfully used in electronic devices instead of conventional insulators/oxides in terms of low cost/weight, easy performance, flexibility, high dynamic strength, and potential for energy storage applications.