Electrical Characteristics of Au/PVA (x-doped)/n-Si: Comparison Study on the Effect of Dopant Type in PVA

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Dökme İ., Altındal Ş.

FIBERS AND POLYMERS, vol.15, pp.2253-2259, 2014 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 15
  • Publication Date: 2014
  • Doi Number: 10.1007/s12221-014-2253-x
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2253-2259
  • Gazi University Affiliated: Yes


The main propose of this study is to investigate whether the doppant material in PVA would change the electrical characteristics of Au/PVA (X-doped) n-Si Schottky structure. Therefore, Au/PVA (Co, Zn-doped) n-Si (D1) and /PVA (Co, Ni-doped) n-Si (D2) Schottky structures were fabricated under the same condition using n-type (phosphor-doped) single crystal silicon wafer with (111) surface orientation. After the PVA/(Co-Zn) and PVA/(Co-Ni) acetates was obtained, the nanofiber film was fabricated on the silicon wafer by the use of an electrospinning technique. The results indicated that the electrical parameters of Au/PVA (x-doped) n-Si Schottky structure were significantly influenced from the doppant material in PVA. Comparative results on electrical parameters of D1 and D2 were reported in this study.