Analysis of barrier inhomogeneities in AuGe/n-Ge Schottky diode

Ulusan A. B., TATAROĞLU A.

INDIAN JOURNAL OF PHYSICS, cilt.92, sa.11, ss.1397-1402, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 92 Sayı: 11
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1007/s12648-018-1240-2
  • Dergi Adı: INDIAN JOURNAL OF PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1397-1402
  • Anahtar Kelimeler: Schottky diode, Barrier inhomogeneities, Series resistance, Gaussian distribution, Temperature effect, CURRENT-VOLTAGE CHARACTERISTICS, ELECTRICAL CHARACTERISTICS, TEMPERATURE-DEPENDENCE, METAL-SEMICONDUCTOR, CURRENT TRANSPORT, PARAMETERS, HEIGHT
  • Gazi Üniversitesi Adresli: Evet

Özet

The barrier inhomogeneities in AuGe/n-Ge Schottky diode have been analyzed by using current-voltage (I-V) measurements over a wide temperature range of 200 to 400K. The electrical parameters such as ideality factor (n), zero-bias barrier height (Phi(Bo)), and series resistance (R-s) of the diode were found to be strongly temperature dependent. The abnormal increase of the barrier height with temperature was attributed to the existence of barrier height inhomogeneities at the metal/semiconductor interface. Therefore, the conventional and modified Richardson plots were drawn to explain Gaussian distribution (GD) of barrier heights. The modified Richardson plot shows a good linearity over the temperature range. The modified Richardson constant (A(*)) was found to be 141.49 A cm(-2) K-2, which is close to the theoretical value of 140 A cm(-2) K-2 for n-Ge. Moreover, the barrier height values obtained from I-V and Norde methods are found to be in good agreement with each other.