The barrier inhomogeneities in AuGe/n-Ge Schottky diode have been analyzed by using current-voltage (I-V) measurements over a wide temperature range of 200 to 400K. The electrical parameters such as ideality factor (n), zero-bias barrier height (Phi(Bo)), and series resistance (R-s) of the diode were found to be strongly temperature dependent. The abnormal increase of the barrier height with temperature was attributed to the existence of barrier height inhomogeneities at the metal/semiconductor interface. Therefore, the conventional and modified Richardson plots were drawn to explain Gaussian distribution (GD) of barrier heights. The modified Richardson plot shows a good linearity over the temperature range. The modified Richardson constant (A(*)) was found to be 141.49 A cm(-2) K-2, which is close to the theoretical value of 140 A cm(-2) K-2 for n-Ge. Moreover, the barrier height values obtained from I-V and Norde methods are found to be in good agreement with each other.