Analyzing the physical properties of perovskite oxides CeBO3 (B¼Be, Mg) for optoelectronic and thermoelectric applications


Ali A., Anissa B., Radouane D., Durukan İ.

Modern Physics Letters B, cilt.38, sa.28, 2024 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38 Sayı: 28
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1142/s0217984924502798
  • Dergi Adı: Modern Physics Letters B
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, INSPEC, zbMATH
  • Anahtar Kelimeler: absorption coefficient, elastic properties, merit factor, optical properties, Perovskite, semiconductor, thermoelectric properties
  • Gazi Üniversitesi Adresli: Evet

Özet

The structural, electronic, elastic, thermoelectric and optical properties of CeBO3 (B = Be, Mg) oxide perovskites were investigated using density functional theory. Exchange and correlation e®ects were addressed through the GGA approximation and the TB-mBJ potential. Thermodynamic stability was con¯rmed by assessing cohesive energy and formation enthalpy. The band structures reveal a semiconductor nature with a moderate indirect band gap of 0.73 (CeBeO3) and 0.51 (CeMgO3). The TB-mBJ approximation has enhanced the gap value with a 55% approaching rate. These compounds exhibited a rigid and elastically anisotropic behavior with chemical bonds manifesting as a mixture of metallic and covalent types. The CeBeO3 displayed ductility while CeMgO3 exhibited brittleness. The optical examination suggests that these oxides exhibit activity across a broad range of the electromagnetic spectrum. Their strong re°ectivity in the near-infrared region was particularly noteworthy suggesting potential use as e®ective shields in this domain. The replacement of beryllium with a magnesium atom enhanced thermoelectric performance by reducing thermal conductivity and increasing the merit factor. Based on the obtained results, the semiconductor perovskites CeBeO3 and CeMgO3 hold promise for e±cient applications in optical and thermoelectric devices.