Comparative study of the electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes


TATAROĞLU A.

CHINESE PHYSICS B, vol.22, no.6, 2013 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 22 Issue: 6
  • Publication Date: 2013
  • Doi Number: 10.1088/1674-1056/22/6/068402
  • Title of Journal : CHINESE PHYSICS B
  • Keywords: Au/n-Si and Au/Si3N4/n-Si type diodes, I-V and C-V measurements, ideality factor, barrier height, CAPACITANCE-VOLTAGE CHARACTERISTICS, METAL-SEMICONDUCTOR, I-V, TEMPERATURE-DEPENDENCE, INTERFACIAL LAYER, BARRIER HEIGHT, PARAMETERS, FREQUENCY, STATES, EXTRACTION

Abstract

In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at +/- 5 V are found to be 1.25 x 10(3) and 1.27 x 10(4), respectively. The main electrical parameters of the MS and MIS diodes, such as the zero-bias barrier height (Phi(Bo)) and ideality factor (n), are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. In addition, the energy density distribution profile of the interface states (N-ss) is obtained from the forward bias I-V, and the series resistance (R-s) values for the two diodes are calculated from Cheung's method and Ohm's law.