Temperature dependent Rolletti stability analysis of GaN HEMT
Optoelectronics and Advanced Materials, Rapid Communications, cilt.3, sa.8, ss.781-786, 2009 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 3 Sayı: 8
- Basım Tarihi: 2009
- Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.781-786
- Gazi Üniversitesi Adresli: Evet
Özet
In this study, Rolletti stability criterion (K) analysis is performed based on the scattering parameters of GaN based High Electron Mobility Transistor (HEMT). The change in K and Δ (Delta, D) with temperature is analyzed and the relationship between K and Δ is determined. The frequency region where the effective temperature change is determined by indicating the critical points for the stability of HEMT. In addition to that, best values of K and Δ are specified along with the boundary values and the region where HEMT works stable is determined.