Temperature dependent Rolletti stability analysis of GaN HEMT

Yildirim R., Yavuzcan H. G., Celebi F. V., Gokrem L.

Optoelectronics and Advanced Materials, Rapid Communications, cilt.3, sa.8, ss.781-786, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 3 Sayı: 8
  • Basım Tarihi: 2009
  • Dergi Adı: Optoelectronics and Advanced Materials, Rapid Communications
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.781-786
  • Gazi Üniversitesi Adresli: Evet

Özet

In this study, Rolletti stability criterion (K) analysis is performed based on the scattering parameters of GaN based High Electron Mobility Transistor (HEMT). The change in K and Δ (Delta, D) with temperature is analyzed and the relationship between K and Δ is determined. The frequency region where the effective temperature change is determined by indicating the critical points for the stability of HEMT. In addition to that, best values of K and Δ are specified along with the boundary values and the region where HEMT works stable is determined.