Temperature dependent Rolletti stability analysis of GaN HEMT


Yildirim R., Yavuzcan H. G. , Celebi F. V. , Gokrem L.

Optoelectronics and Advanced Materials, Rapid Communications, vol.3, no.8, pp.781-786, 2009 (Journal Indexed in SCI Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 3 Issue: 8
  • Publication Date: 2009
  • Title of Journal : Optoelectronics and Advanced Materials, Rapid Communications
  • Page Numbers: pp.781-786

Abstract

In this study, Rolletti stability criterion (K) analysis is performed based on the scattering parameters of GaN based High Electron Mobility Transistor (HEMT). The change in K and Δ (Delta, D) with temperature is analyzed and the relationship between K and Δ is determined. The frequency region where the effective temperature change is determined by indicating the critical points for the stability of HEMT. In addition to that, best values of K and Δ are specified along with the boundary values and the region where HEMT works stable is determined.