Optoelectronics and Advanced Materials, Rapid Communications, cilt.3, sa.8, ss.781-786, 2009 (SCI Expanded İndekslerine Giren Dergi)
In this study, Rolletti stability criterion (K) analysis is performed based on the scattering parameters of GaN based High Electron Mobility Transistor (HEMT). The change in K and Δ (Delta, D) with temperature is analyzed and the relationship between K and Δ is determined. The frequency region where the effective temperature change is determined by indicating the critical points for the stability of HEMT. In addition to that, best values of K and Δ are specified along with the boundary values and the region where HEMT works stable is determined.