On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1 MHz

Eroglu A., TATAROĞLU A., Altindal Ş.

MICROELECTRONIC ENGINEERING, vol.91, pp.154-158, 2012 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 91
  • Publication Date: 2012
  • Doi Number: 10.1016/j.mee.2011.07.016
  • Journal Name: MICROELECTRONIC ENGINEERING
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.154-158
  • Keywords: MIS structure, Dielectric properties, Ac conductivity, Ac resistivity, Electric modulus, SCHOTTKY DIODES, VOLTAGE CHARACTERISTICS, METAL-SEMICONDUCTOR, INTERFACE STATES, THIN-FILMS, FREQUENCY, INSULATOR, BARRIER, OXIDE, CAPACITANCE
  • Gazi University Affiliated: Yes

Abstract

In this study, the temperature dependence of the dielectric properties, conductivity and resistivity of metal-insulator-semiconductor (MIS) structures have been investigated using capacitance (C) and conductance (G/omega) measurements in wide temperature range of 120-400 K at 1 MHz. Calculation of the dielectric constant (epsilon'), dielectric loss (epsilon ''). loss tangent (tan delta), ac conductivity (sigma(ac)), ac resistivity (rho(ac)) and the real and imaginary parts of electric modulus (M' and M '') were given in the studied temperature range. The values of the epsilon', epsilon '' and sigma(ac) increase exponentially with the increasing temperature between 280 K and 400 K. On the other hand, these values remain almost constant between 120 K and 240 K. In addition, the experimental dielectric data have been analyzed by considering electric modulus formalism. The In sigma(ac) vs. 1000/T plot shows two linear regions with different slopes which correspond to low (120-240 K) and high (280-400 K) temperature ranges. The values of activation energy for two different conduction mechanisms were found as 4 meV and 201 meV for low and high temperature ranges, respectively. (C) 2011 Elsevier B.V. All rights reserved.