Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide Frequency Range

Demirezen S., Cetinkaya H. G., ALTINDAL Ş.

SILICON, cilt.14, sa.14, ss.8517-8527, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 14 Sayı: 14
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s12633-021-01640-0
  • Dergi Adı: SILICON
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex, INSPEC
  • Sayfa Sayıları: ss.8517-8527
  • Anahtar Kelimeler: PCBM/NiO:ZnO interlayer, Impedance spectroscopy method (ISM), Doping level, interface-states, Polarization effects on the dielectric properties, Frequency and voltage dependence, VOLTAGE CHARACTERISTICS, MS STRUCTURES, NICKEL-OXIDE, SPECTROSCOPY, TEMPERATURE, RELAXATION, PARAMETERS, BEHAVIOR, LAYER, ZNO
  • Gazi Üniversitesi Adresli: Evet

Özet

In order to study, in detail, the relationship of effect of NiO doping in ZnO on AC electrical-conductivity (sigma(ac)), complex-permittivity (epsilon*), complex-electric modulus (M*) and interface-states (N-ss), we have been used capacitance/conductance-voltage (C/G-V) measurements of the performed Al/PCBM/NiO:ZnO/p-Si structures over wide-range of frequency and voltage. For this reason, various-ratio (2, 10, and 20%) NiO doped ZnO layer were coated on the Si(p-type) wafer as an interlayer. The values of complex dielectric-constant/loss (epsilon'/epsilon"), loss tangent (tan delta), ac electrical-conductivity (sigma(ac)), real/imaginary-components of complex electric modulus (M', M") were calculated from the C/G-V measurements as function of frequency between 0.5-2.5V by 100 mV steps. All parameters were found distinctly-function of frequency/voltage owing to the existence of N-ss, surface/dipole-polarizations and interlayer particularly at low and intermediate frequencies. The observed the higher value of dielectric constant (=2.5 for 2%(NiO) and 4.25 for 10 % (NiO)) even at 10 kHz show that (PCBM/NiO:ZnO) thin film can be successfully used instead of conventional low-dielectric SiO2. The value of sigma(ac) increase with increasing doping rate of NiO. Thus, the used high-dielectric organic thin film between metal and semiconductor can be also an advantageous for applications in place of conventional metal/oxide/semiconductor (MOS) structures.