Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.30, sa.20, ss.19060-19068, 2019 (SCI-Expanded)
In this work, thin films of ZnSB were deposited by a thermionic vacuum arc technique. ZnSB thin films were deposited to various substrates such as glass, polyethylene terephthalate and silicon wafer. Structural, optical, morphological properties and chemical analysis of ZnSB thin films were investigated. The thicknesses values of the thin films were measured as to be 60 nm, 5 nm and 40 nm on glass, PET and Si substrates, respectively by using interferometer. The X-ray diffraction (XRD) were used to identify the structural characteristics of the thin films. ZnSB thin films were observed in polycrystalline structures from the XRD results. UV-Visible spectrophotometer were carried out to determine optical properties of ZnSB thin films. The average transmittance values of the ZnSB thin films were obtained to be 89% and 85% on glass and PET substrates, respectively. The band gap energy for ZnSB thin films were estimated as 3.69 eV and 3.54 eV on glass and PET substrates. By using photoluminescence spectroscopy, ZnSB thin films are located at 413 nm (3.08 eV) where is known as near band emission band. From FESEM and AFM analyses, ZnSB thin films have exhibited smoothness, uniform and densely formed surface profile. Chemical analyses of ZnSB thin films were carried out by Raman spectroscopy. Considering Raman spectra of ZnSB thin films, ZnS peaks were observed mainly.