Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures

SEVGİLİ Ö., Azizian-Kalandaragh Y., Allindal S.

Physica B: Condensed Matter, vol.587, 2020 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 587
  • Publication Date: 2020
  • Doi Number: 10.1016/j.physb.2020.412122
  • Journal Name: Physica B: Condensed Matter
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Keywords: ZnFe2O4-PVP polymer, MPS structure, Electrical characteristics, Dielectric properties, Frequency and voltage dependence, IMPEDANCE SPECTROSCOPY, SCHOTTKY DIODE, SERIES RESISTANCE, CONDUCTIVITY, STATES, PARAMETERS, INTERLAYER, RELAXATION, GRAPHENE, MODULUS
  • Gazi University Affiliated: Yes


© 2020 Elsevier B.V.Zinc-ferrite nanostructures were fabricated using ultrasonic-assisted-method. FE-SEM, EDX and XRD were utilized for the investigation of morphological and structural properties. Au/(ZnFe2O4-PVP)/n-Si MPS structures were prepared for the purpose of characterizing electrical and dielectric properties via impedance-spectroscopy-method (ISM) between -2 V and 5 V in the frequency range of 10 kHz-5MHz. The frequency-dependent values of electrical parameters such as VD, ND, EF, WD and ΦC-V were extracted from the reverse bias C−2-V. Voltage-dependent profiles of Rs and Nss was calculated using Nicollian-Brews and high-low frequency capacitance (CLF-CHF) methods. Results showed Nss is more effective are depletion and inversion whereas accumulation region is the region at which Rs is more effective. The real and imaginary parts of ε* and M* were calculated and showed strong dependence on frequency and voltage. The higher values of C, G/ω or ϵ', ϵ" at low frequencies and observed peak in the M″-V and (tanδ)-V were associated with Nss.