Growth and Characterization of Stoichiometric Cu2ZnSnS4 Crystal Using Vertical Bridgman Technique
Physica Status Solidi (A) Applications and Materials Science, cilt.219, sa.3, 2022 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 219 Sayı: 3
- Basım Tarihi: 2022
- Doi Numarası: 10.1002/pssa.202100595
- Dergi Adı: Physica Status Solidi (A) Applications and Materials Science
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Chemical Abstracts Core, Compendex, INSPEC
- Anahtar Kelimeler: conductivity, Cu2ZnSnS4, mobility
- Gazi Üniversitesi Adresli: Hayır
Özet
© 2021 Wiley-VCH GmbHStoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single-zone vertical furnace by Bridgman technique. X-ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate the structural properties of the grown crystals, which verifies the formation of mono-phase CZTS crystals with kesterite structure. The energy-dispersive X-ray analysis (EDS) indicates the growth of CZTS single phase crystals with a nearly stoichiometric chemical composition. The carrier concentration, mobility, and resistivity of the crystals are determined from Hall Effect measurements. At room temperature, the respective values are found to be 4.0 × 1015 cm−3, 1.0 cm2 Vs−1, and 1540 Ω cm. The activation energies for the acceptor levels are also determined using the temperature-dependent hole concentration measurement. CuZn-antisite originated acceptor level with activation energies of ≈121 meV is identified in a nearly stoichiometric kesterite structure.