A semiconductor photographic system with a modified cell

Salamov B.

IMAGING SCIENCE JOURNAL, vol.47, no.4, pp.181-188, 1999 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 47 Issue: 4
  • Publication Date: 1999
  • Doi Number: 10.1080/13682199.1999.11736358
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.181-188
  • Gazi University Affiliated: No


This paper studies a modified photographic cell with symmetrical short gaps between a high-resistivity detector plate and two planar electrodes. The photographic system with a modified cell is designed to optimize the parameters for the enhancement of the resolution in such applications. The spatial stabilization of the current in the modified cell with a planar GaAs photodetector is studied in a wide range of gas pressure values at 101-342 Torr. Characteristics of the photographic system are obtained both without and with illumination of the detector plate with light of a particular wavelength range used to control the photoconductivity of the material. The current-voltage characteristic (CVC) and the photographic cell response are recorded.