Impurity conduction in InxGa1-xAs


KASAP M. , ÖZER M. , Çolakoǧlu K.

Turkish Journal of Physics, cilt.20, sa.7, ss.740-746, 1996 (SCI Expanded İndekslerine Giren Dergi) identifier

  • Cilt numarası: 20 Konu: 7
  • Basım Tarihi: 1996
  • Dergi Adı: Turkish Journal of Physics
  • Sayfa Sayıları: ss.740-746

Özet

Resistivity measurements on InxGa1-xAs grown on semi-insulating GaAs by MBE and doped with Si to a carrier density of approximately 1016 cm-3 were made as a function of temperature (4.2-50 K) and pressure (0-8 kbar) for a wide range of alloy compositions. The resistivity analysis at low temperatures shows that the Mott transition occurs in the limited alloy composition range x = 0.30 - 0.60 at these doping densities. For alloy compositions x ≤ 0.20, the temperature and pressure dependence of the low temperature resistivity can be well explained by the thermally-activated hopping conduction law. At higher In compositions (x > 0.60), the conduction in the impurity band is of a metallic character instead of thermally-activated hopping conduction. © Tübi̇tak.