Comparative study of Bi overlayers on III-Sb(110) (1x1) surfaces

Gay S., ÇAKMAK M., Srivastava G.

SURFACE SCIENCE, vol.454, pp.26-29, 2000 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 454
  • Publication Date: 2000
  • Doi Number: 10.1016/s0039-6028(00)00182-5
  • Journal Name: SURFACE SCIENCE
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.26-29
  • Gazi University Affiliated: Yes


Using the pseudopotential method and the local density approximation, we present a comparative study of the atomic and electronic structure of a single monolayer deposition of Bi on III-Sb(110)-(1 x 1) surfaces, where III = Al, Ga or In. In this respect, we find that within the epitaxially continued layer structure, Bi/GaSb(110)(1 x 1) is somewhat different from the monolayer coverage of Bi and Sb on III-As(110) and III-P(110) substrates. In particular, the tilt of the Bi chain is reversed for Bi/GaSb(110). The trend in the characteristics of Bi chain on III-Sb(110) surfaces is analysed in terms of the relative atomic sizes and electronegativities of the substrate anion and cation. (C) 2000 Elsevier Science B.V. All rights reserved.