The main electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric interfacial layer between metal and semiconductor can improve the performance of Schottky diodes. From the experimental data, both electrical and dielectric parameters were found as strong function of frequency and applied bias voltage. The Fermi energy level (E-F), the concentration of doping donor atoms (P), barrier height (Phi(B)) and series resistance (R-s) values were obtained from reverse and forward bias C-V characteristics. The changes in E-F and N-D with frequency are considerably low. Therefore, their values were taken at about constant. The real and imaginary parts of dielectric constant (epsilon', epsilon ''), tangent loss (tan delta), ac electrical conductivity (sigma(ac)), and real and imaginary parts of electric modulus (M' and M '') values were also obtained from reverse and forward bias C-V and G/omega-V characteristics. In addition, the voltage dependent profiles of all these electrical and dielectric parameters were drawn for each frequency. These results confirmed that both electrical and dielectric properties of Au/TiO2/n-4H-SiC (MIS) type SBD are quite sensitive to both the frequency and applied bias voltage due to surface polarization, density distribution of interface traps (D-it), and interfacial layer.