Frequency Response of Metal-Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique


Tan S. O. , Tascioglu I., ALTINDAL Ş.

IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.68, no.10, pp.5085-5089, 2021 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 68 Issue: 10
  • Publication Date: 2021
  • Doi Number: 10.1109/ted.2021.3107229
  • Title of Journal : IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Page Numbers: pp.5085-5089
  • Keywords: Atomic layer deposition (ALD) technique, electric admittance, frequency dependence, polarization, surface states, INTERFACE STATES, CONDUCTANCE, LAYER, SI

Abstract

MIS-type Al/Al2O3/p-Si structures were fabricated to identify its admittance analysis through capacitance/conductance versus logarithmic frequency (C/G-V-f) data in the 1 kHz-5 MHz and +/- 3 V ranges at room temperature. Admittance measurements determine the surface states (N-ss) and these states occurred at M/S interlayer arise as a result of high capacitance and conductance values at low frequencies. This is also explained by adequacy of tracking ac signal by N-ss at lower frequencies. In consequence with N-ss presence, a peak turns up or becomes visible at the normalized parallel conductance versus logarithm of frequency [G(p)/omega - ln(f)] plot under various biases. In the energy range of (0.17 - E-v)-(0.67 - E-v), N-ss and their life/relaxation time (tau) values vary from 4.95 x 10(12) to 7.42 x 10(11) eV(-1).cm(-2) and from 7.85 x 10(-5) to 1.05 x 10(-6) s, respectively.