Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes

Bulbul M. M., Bengi S., Dokme İ., Altindal Ş., Tunc T.

JOURNAL OF APPLIED PHYSICS, vol.108, no.3, 2010 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 108 Issue: 3
  • Publication Date: 2010
  • Doi Number: 10.1063/1.3462427
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Keywords: crystal defects, ion implantation, light polarisation, optical materials, optical waveguides, photoelasticity, refractive index, HIGH SERIES RESISTANCE, BARRIER DIODES, DIELECTRIC-PROPERTIES, INTERFACE, NANOFIBERS, BLENDS, MODEL, FILMS
  • Gazi University Affiliated: Yes


The temperature dependence of capacitance-voltage (C-V) and conductance-voltage (G/w-V) characteristics of Au/polyvinyl alcohol (Co,Zn-doped)/n-Si Schottky diodes (SDs) was investigated by considering series resistance effect in the temperature range of 80-400 K. The C-V and G/w-V characteristics confirm that the series resistance (R(s)) and interface state density (N(ss)) of the diode are important parameters that strongly influence the electric parameters of SDs. The crossing of the G/w-V curves appears as an abnormality compared to the conventional behavior of ideal SDs. It is thought that the presence of series resistance keeps this intersection hidden and unobservable in homogeneous SDs but it appears in the case of inhomogeneous SDs. In addition, the high frequency C(m) and G(m)/w values measured under both reverse and forward bias were corrected for the effect of series resistance to obtain the real diode capacitance and conductance. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3462427]