Temperature dependent dielectric properties of Schottky diodes with organic interfacial layer

Dokme İ., Tunc T., Altindal Ş., Uslu I.

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, cilt.4, sa.8, ss.1225-1228, 2010 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 4 Sayı: 8
  • Basım Tarihi: 2010
  • Dergi Adı: OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1225-1228
  • Gazi Üniversitesi Adresli: Evet

Özet

The dielectric properties of Au/PVA(Co,Ni-doped)/n-Si Schottky diodes (SDs) have been studied in the temperature range of 80-400 K. In this study, polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta) and the ac electrical conductivity (sigma(ac)) obtained from the measured capacitance and conductance are studied for Au/PVA(Co,Ni-Doped)/n-Si SDs. Experimental results show that the values of epsilon', epsilon '' and tan delta were found a function of temperature. The ac electrical conductivity (sigma(ac)) of Au/ PVA(Co,Ni-Doped)/n-Si SDs is found to increase with temperature.