Self-assembled patches in PtSi/n-Si (111) diodes

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Afandiyeva I. M., Altindal Ş., Abdullayeva L. K., Bayramova A. I.

JOURNAL OF SEMICONDUCTORS, vol.39, no.5, 2018 (ESCI)

• Publication Type: Article / Article
• Volume: 39 Issue: 5
• Publication Date: 2018
• Doi Number: 10.1088/1674-4926/39/5/054002
• Journal Name: JOURNAL OF SEMICONDUCTORS
• Journal Indexes: Emerging Sources Citation Index (ESCI), Scopus
• Gazi University Affiliated: Yes

Abstract

Using the effect of the temperature on the capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of PtSi/n-Si (111) Schottky diodes the profile of apparent doping concentration (N-Dapp), the potential difference between the Fermi energy level and the bottom of the conduction band (V-n), apparent barrier height (phi(Bapp)), series resistance (R-s) and the interface state density N-ss have been investigated. From the temperature dependence of (C-V) it was found that these parameters are non-uniformly changed with increasing temperature in a wide temperature range of 79-360 K. The voltage and temperature dependences of apparent carrier distribution we attributed to the existence of self-assembled patches similar the quantum wells, which formed due to the process of PtSi formation on semiconductor and the presence of hexagonal voids of Si (111).