Vibrational modes in (TlGaS2) x‒(TlGaSe2)1−x mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line-shapes

Isik M., Terlemezoglu M., HASANLI N., Babayeva R.

Journal of Materials Science: Materials in Electronics, cilt.31, sa.17, ss.14330-14335, 2020 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 31 Sayı: 17
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1007/s10854-020-03990-8
  • Dergi Adı: Journal of Materials Science: Materials in Electronics
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.14330-14335
  • Gazi Üniversitesi Adresli: Hayır

Özet

© 2020, Springer Science+Business Media, LLC, part of Springer Nature.TlGaS2 and TlGaSe2 ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications. A series of (TlGaS2)x‒(TlGaSe2)1−x layered mixed crystals grown by Bridgman method were investigated from the standpoint of their Raman spectroscopy characteristics. Experimental Raman scattering study of crystals were reported in the frequency range of 80–400 cm−1 for compositions of x = 0, 0.25, 0.50, 0.75 and 1.0. The effects of crystal disorder on the line-width broadening of Raman-active modes were studied in detail. The asymmetry in the Raman line-shape was analyzed for two highest-frequency intralayer mode presenting two-mode behavior. It was shown that mixed crystal disorder effect is the major source for change of Raman line-shape with composition.