InxGa1-xAs/GaAs multi quantum well (MQW) structure was grown using Molecular Beam Epitaxy (MBE) system. The structural analysis was performed by high resolution X-ray diffraction (HRXRD) method. The fringes in the Rocking curves show that the layer homogeneity and high crystal quality was achieved. In addition, the thickness of the quantum well and the In composition of the quantum well layer was obtained from the rocking curve simulation. The temperature dependent optical characterization was performed using photoluminescence (PL) method. The forbidden band gap energy and the In composition was obtained from room temperature PL results. The peak energy shift, activation energy and the full width at half maximum values (FWHM) were also obtained from temperature dependent PL measurements. At low temperatures below 77K, broadening of the full width at half maximum and a shifting of PL peak were observed.