An Alternative Material for Semiconductor Technologies: Li<sub>2</sub>VMnBr<sub>6</sub> Double Perovskite

ÖZDEMİR E. G.

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, cilt.38, sa.5, 2025 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 38 Sayı: 5
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1007/s10948-025-07056-w
  • Dergi Adı: JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Elastic, Ferromagnetic, Li2VMnBr6, Semiconducting, Thermodynamics
  • Gazi Üniversitesi Adresli: Evet

Özet

Li2VMnBr6 double perovskite material was obtained as a ferromagnetic semiconductor. The semiconductor band gaps for the spin-up orientations are 0.3725 eV, 1.7943 eV, and 2.0627 eV for the GGA + PBE, GGA + 3 eV, and GGA + 4 eV approximations, respectively. For the spin-down orientations, these gaps are -2.4070 eV, 3.0968 eV, and 3.0875 eV. The 10.52 & Aring; is the lattice constant at the equilibrium point. Li2VMnBr6 is mechanically stable. While it shows ductile character at 0 GPa pressure, it turns into a brittle structure after 10 GPa with increasing pressure. According to the Gibbs energy value, it is also structurally stable at low pressure. According to elastic and thermodynamic calculations, the Debye temperatures at the initial conditions were 212.264 K and 240.76 K. The Curie temperature and formation energy values were obtained as 303 K and -1.291 eV, respectively. The total magnetic moment of Li2VMnBr6 double perovskite is obtained as 8.00 mu (B). The most partial contributions come from Mn and V-atoms with the values of 4.4699 mu (B) and 2.6219 mu (B). The structural, electronic, and magnetic characteristics of Li2VMnBr6 double perovskite material and its elastic properties make it a highly efficient alternative material for semiconductor technologies.