The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I-V characteristics

TATAROĞLU A. , Altindal Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, cilt.484, ss.405-409, 2009 (SCI İndekslerine Giren Dergi) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 484
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.jallcom.2009.04.119
  • Sayfa Sayıları: ss.405-409


The temperature dependence of the current-voltage (I-V) characteristics of Au/SiO2/n-Si (MIS) Schottky diodes has been measured in the temperature range of 300-400 K. Based on the thermionic emission (TE) theory, the forward and reverse I-V characteristics are analyzed to calculate the MIS Schottky diode barrier parameters. The calculated zero-bias barrier height (Phi(Bo)) and ideality factor (n) assuming TE theory show strong temperature dependence. A decrease in the value of n and an increase in Phi(Bo) with increasing temperature is observed. The calculated values of Phi(Bo) and n varied from 0.63 eV and 2.90 at 300 K to 0.80 eV and 1.79 at 400 K, respectively. Also, the temperature dependence of energy distribution of interface states (N-ss) was obtained from the forward bias I-V measurements by taking into account the bias dependence effective barrier height (Phi(e)) and ideality factor (n). In addition, the values of series resistance (R-s) were determined using Cheung's method. These I-V characteristics confirmed that the distributions of N-ss and R-s are important parameters that influence the electrical characteristics of MIS Schottky diodes. (C) 2009 Elsevier B.V. All rights reserved.