Effect of Green Synthesized ZnO Nanoparticles on Optoelectronic Characteristics of P3HT-Based Bulk Heterojunction Photodetectors
X. Polymer Science and Technology Congress with International Participation (PolimerTR 2026), İstanbul, Türkiye, 16 - 18 Eylül 2026, ss.446, (Özet Bildiri)
- Yayın Türü: Bildiri / Özet Bildiri
- Basıldığı Şehir: İstanbul
- Basıldığı Ülke: Türkiye
- Sayfa Sayıları: ss.446
- Gazi Üniversitesi Adresli: Evet
Özet
Solution-based organic-inorganic hybrid photodetectors offer great potential for new generation flexible and large-area optoelectronic applications. In this study, the electrical and photoresponse characteristics of bulk heterojunction (BHJ) photodetectors combining poly(3- hexylthiophene) (P3HT) polymer as an organic donor with zinc oxide (ZnO) nanoparticles produced by green synthesis as inorganic acceptors were investigated. The advantages of P3HT's high optical absorption and flexibility were combined with ZnO's high electron mobility and deep conduction band alignment. Obtaining the acceptor phase, ZnO nanoparticles, through environmentally friendly green synthesis rather than conventional chemical methods allowed natural phytochemical passivation of the material surface while simultaneously enabling the creation of controlled oxygen-vacancy (VO) defects at the interface. Pure P3HT and ZnO:P3HT nanocomposite structures, obtained using a chlorobenzene solution, were directly compared in their photoelectric performance by coating them onto silver interdigitated electrodes (IDE) on glass substrates. Dark current-voltage (I-V) measurements showed that n-type ZnO doping successfully suppressed the dark current in P3HT by inducing strong interfacial recombination. However, significant photoelectric differences were detected between the two structures in I-V and time-dependent (I-t) on/off measurements under 100 mW/cm2 illumination. The pure P3HT film exhibited a slow photoresponse and persistent photoconductivity across successive cycles due to intrinsic shallow polymeric traps and a hopping mechanism, while the strong intrinsic electric field arising from the large Fermi-level difference in the ZnO-doped structure dramatically accelerated the carrier-transfer kinetics. However, the basic photodetector parameters, sensitivity (S), responsivity (R), and specific-detectivity (D*), are presented comparatively by the calculation.