Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

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Atmaca G., NARİN P., Kutlu E., Malin T. V., Mansurov V. G., Zhuravlev K. S., ...Daha Fazla

IEEE TRANSACTIONS ON ELECTRON DEVICES, cilt.65, sa.3, ss.950-956, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 65 Sayı: 3
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1109/ted.2018.2796501
  • Dergi Adı: IEEE TRANSACTIONS ON ELECTRON DEVICES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.950-956
  • Anahtar Kelimeler: 2-dimensional electron gas (2DEG), AlGaN, drift velocity, gallium nitride (GaN), negative differential resistivity (NDR), SiN passivation, MONTE-CARLO CALCULATION, HIGH-FIELD TRANSPORT, SURFACE PASSIVATION, ALGAN/GAN, MOBILITY, BREAKDOWN, DYNAMICS, DEVICES
  • Gazi Üniversitesi Adresli: Evet

Özet

The aim of this paper is an investigation of electric field-dependent drift velocity characteristics for Al0.3Ga0.7N/AlN/GaN heterostructures without and with in situ Si3N4 passivation. The nanosecond-pulsed currentvoltage (I-V) measurements were performed using a 20-ns applied pulse. Electron drift velocity depending on the electric field was obtained from the I -V measurements. Thesemeasurements showthat a reduction in peak electron velocity from 2.01 x 10(7) to 1.39 x 10(7) cm/s after in situ Si3N4 passivation. Also, negative differential resistance regime was observed which begins at lower fields with the implementation of in situ Si3N4 passivation. In our samples, the electric field dependence of drift velocitywas measured over 400 kV/cm due to smaller sample lengths. Then, a wellknown fitting model was fitted to our experimental results. This fitting model was improved in order to provide an adequate description of the field dependence of drift velocity. It gives reasonable agreement with the experimental drift velocity data up to 475 kV/cm of the electric field and could be used in the device simulators.