Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage

Cetinkaya H. G., Kaya A., Altindal Ş., Kocyigit S.

CANADIAN JOURNAL OF PHYSICS, vol.93, no.10, pp.1213-1220, 2015 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 93 Issue: 10
  • Publication Date: 2015
  • Doi Number: 10.1139/cjp-2014-0628
  • Journal Name: CANADIAN JOURNAL OF PHYSICS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1213-1220
  • Gazi University Affiliated: Yes

Abstract

Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures have been investigated using the admittance spectroscopy method in the temperature and voltage ranges of 160-300 K and -4-5 V, respectively. Experimental results show that both the main electrical and dielectric parameters, such as barrier height (Phi(b)), depletion layer width (W-d), series resistance (R-s) of structure, real and imaginary parts of dielectric constant (epsilon', epsilon '') and electric modulus (M' and M ''), tan delta, and AC conductivity (sigma(ac)) were found to be strong functions of temperature and applied bias voltage. M' and M '' versus V plots have a peak at about 1 V. While the peak position shifted towards negative biases, the magnitude of the peak decreases with increasing temperature. Such peak behavior in M' and M '' can be attributed to the existence of particular density distribution profile interface states at the interfacial layer-n-Si interface and their reordering and restructure under external electric field and interface polarization. These peaks also indicated that the Au/1% GP+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structure exhibits relaxation phenomena.