Akademik Veri Yönetim Sistemi
Silicon, 2025 (SCI-Expanded, Scopus)
This study investigated the dielectric and electrical features of Au/ZnO/p-InP (MOS) device over the 10 Hz to 1 MHz frequency range under dc bias voltages from 0.75 to 1.75 V in the periodic increment of 0.25 V, all measured at room temperature. Impedance spectroscopy showed that the real component of the impedance (Z′) diminishes as the frequency and bias increase, while the imaginary component (Z″) presents a single relaxation peak that shifts with bias. Cole–Cole plots were used to extract equivalent circuit elements, revealing that parallel resistance (Rp) decreases with bias, while series resistance (Rs) and capacitance (Cp) remain nearly constant. The dielectric constant (ε') and dielectric loss (ε''), which are the real and imaginary parts of the complex dielectric permittivity, were measured under the same conditions as the impedance measurements. The findings demonstrate that the values of ε' and ε'' exhibit a rapid decline as the frequency increases up to 100 kHz, beyond which they remain nearly stable at higher frequencies. This indicates a reduced polarization response due to limitations in dipolar relaxation. ac conductivity is nearly constant at low frequencies but increases linearly above 10 kHz, suggesting hopping conduction. These findings demonstrate that the characteristics of the fabricated device are strongly affected by variations in frequency and applied voltage and thus it can be used as an electronic circuit component.