The interface states and series resistance analyzing of Au/SiO 2/n-GaAs at high temperatures

Altuntas H., Ozcelik S.

Journal of Alloys and Compounds, cilt.577, ss.143-147, 2013 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 577
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.jallcom.2013.04.098
  • Dergi Adı: Journal of Alloys and Compounds
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.143-147
  • Anahtar Kelimeler: Au/SiO2/GaAs Schottky diodes, Interface states, Insulator layer, I-V characteristics, SCHOTTKY-BARRIER DIODES, VOLTAGE CHARACTERISTICS, CURRENT-TRANSPORT, I-V, C-V, HEIGHT, GAAS, INHOMOGENEITIES, SEMICONDUCTOR, PARAMETERS
  • Gazi Üniversitesi Adresli: Evet

Özet

The current-voltage (I-V) characteristics of Au/SiO2/n-GaAs metal-oxide-semiconductor (MOS) type Schottky barrier diodes (SBDs) have been measured in the temperature range of 300-400 K with 25 K steps. From the I-V characteristics of SBDs, the zero-bias barrier height φBo and ideality factor (n) assuming the thermionic emission (TE) mechanism show strong temperature dependence. While n decreases, φBo increases with increasing temperature. The obtained values of φBo and n varied from 0.81 eV and 1.33 at 300 K and 0.93 eV and 1.12 at 400 K, respectively. In addition, the interface states distribution profile (Nss) as a function of temperature was extracted from the forward-bias I-V measurements by taking into account the bias dependence of the effective barrier height φe and series resistance (Rs) for the SBDs. The values of Rs were performed using the Cheung's method. Thus, important electrical parameters as a function of temperature were analyzed by using the I-V measurements. © 2013 Elsevier B.V. All rights reserved.