Akademik Veri Yönetim Sistemi
JOURNAL OF MATERIALS SCIENCE AND ENGINEERING B, cilt.9, ss.32-40, 2019 (Hakemli Dergi)
In recent years, with the development of technology, interest in microelectronics and thin film devices has increased considerably. Future improvements in microelectronics and thin film devices are dependent on the progress of novel materials and
new deposition processes. In particular, the continuing drive to some devices such as silicon devices will soon require SiO2 gate and oxide layers with a thickness on the order of a few nanometers as 1 or 2 nm. Titanium dioxide is a candidate material for microelectronic and thin-film devices, a wide-band-gap semiconductor that exhibits various crystal structures. Similarly, thin-film techniques such as ALD (atomic layer deposition) are attracting attention for the preparation of these candidate materials, offering higher film uniformity and conformity. Present study demonstrates how TiO2 thin films were growth by ALD technique on silicon substrates at 100 °C, 150 °C and 200 °C temperatures. Different deposition conditions were examined to determine to increase film quality and efficient production of set up. XPS (X-ray photoelectron spectroscopy) technique was used to obtain the surface composition of the TiO2 films. Film thicknesses and crystal structures were investigated by ellipsometry and XRD (X-ray diffraction). Electrical properties of the films were measured using four-probe techniques as well. Obtained results were evaluated in terms of repeatability of recipes and application potential.