The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures

ÇETİNKAYA H. G., Bengi S., DURMUŞ P., Demirezen S., ALTINDAL Ş.

Silicon, cilt.16, sa.5, ss.2315-2322, 2024 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 16 Sayı: 5
  • Basım Tarihi: 2024
  • Doi Numarası: 10.1007/s12633-024-02929-6
  • Dergi Adı: Silicon
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Compendex, INSPEC
  • Sayfa Sayıları: ss.2315-2322
  • Anahtar Kelimeler: (%0.5 Bi:ZnO) interlayer, Frequency and voltage dependence, High-low frequency capacitance and Hill-Coleman method, Surface states and series resistance
  • Gazi Üniversitesi Adresli: Evet

Özet

The capacitance/conductance-voltage-frequency (C/G-V-f) features of the Au/p-Si structures with (%0.5 Bi-doped ZnO) interlayer grown by spin-coating technique was investigated between 100 kHz and 1 MHz. The C−2-V curves that depend on frequency were used to determine the electrical-parameters like diffusion-potential (VD), Fermi-energy level (EF), barrier-height (ΦB), and depletion-layer (WD) thickness. The value of ΦB was found to increase with increasing frequency due to the decrease in surface-states (Nss) effects on the C-V characteristics. Voltage dependent series-resistance (Rs) was obtained by using Nicollian-Brews method for each frequency and it decreased with increasing frequency. Both the low-high frequency capacitance (CLF-CHF) and Hill-Coleman techniques were used to determine the voltage-dependent profile of Nss. While Nss decreases with increasing frequency, voltage-dependent on them give two distinctive peaks due to a special distribution of them at interlayer/semiconductor interface in the bandgap depending on their relaxation time. All these experimental results indicate that the existence of Rs, Nss, and interlayers considerably influence the impedance measurements.