Correlation between morphology and dielectric behavior of hydrothermally grown TiO2 nanorods on TiO2/p-Si MIS devices
Journal of Alloys and Compounds, cilt.1083, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 1083
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.jallcom.2026.191764
- Dergi Adı: Journal of Alloys and Compounds
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC, Public Affairs Index, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO)
- Anahtar Kelimeler: Charge transport mechanisms, Dielectric behavior, Hydrothermal growth, Interfacial polarization, MIS structures, TiO2 nanorod
- Gazi Üniversitesi Adresli: Evet
Özet
TiO2 nanorods (TNRs) were grown on TiO2-seeded p-type Si substrates by a hydrothermal method to investigate the effect of growth duration on the electrical and dielectric response of Ag/TNR/TiO2/p-Si/Al MIS devices. As the growth time increased from 1 to 4 h, the nanorod length increased from approximately 355 nm to 1.8 μm, while the diameter increased from approximately 35–290 nm. The devices exhibited growth-time-dependent capacitance, conductance, and dielectric characteristics. Shorter-nanorod samples generally showed higher capacitance, whereas longer-nanorod samples exhibited lower capacitance and dielectric loss under the investigated measurement conditions. The electric-modulus response also varied among the samples. Differences in the fitted 1/Cc2−V slopes indicate that nanorod growth time affects the measured capacitance–voltage response. Together, these results establish a relationship between nanorod morphology and the measured dielectric behavior of the MIS devices, without assigning a quantitative trend to interface-state density.