Theoretical study of dangling-bond wires on the H-terminated Si surface

ÇAKMAK M., Srivastava G.

SURFACE SCIENCE, cilt.532, ss.556-559, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 532
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1016/s0039-6028(03)00118-3
  • Dergi Adı: SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.556-559
  • Gazi Üniversitesi Adresli: Evet

Özet

We report results of density functional theory calculations on the structural and electronic properties for the dangling-bond wires on Si(001) with the (2 x 1), (2 x 2) and (4 x 1) surface reconstructions. For each surface reconstruction we have examined the characteristics of the Si dimer and the resulting band structure. We find that the system is semiconducting in nature for two of the various models considered: for the (2 x 2) reconstruction with the dangling-bond line parallel to Si dimers, and for the (4 x 1) reconstruction with alternate Si dimers being fully hydrogenated and fully empty. (C) 2003 Elsevier Science B.V. All rights reserved.